View LTC4446EMS8E-PBF_3387682.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ltc4446 1 4446f typical application features applications description high voltage high side/ low side n-channel mosfet driver the ltc ? 4446 is a high frequency high voltage gate driver that drives two n-channel mosfets in a dc/dc converter with supply voltages up to 100v. the powerful driver ca- pability reduces switching losses in mosfets with high gate capacitance. the ltc4446s pull-up for the top gate driver has a peak output current of 2.5a and its pull-down has an output impedance of 1.2 . the pull-up for the bot- tom gate driver has a peak output current of 3a and the pull-down has an output impedance of 0.55 . the ltc4446 is con? gured for two supply-independent inputs. the high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114v above ground. the ltc4446 contains undervoltage lockout circuits that disable the external mosfets when activated. the ltc4446 is available in the thermally enhanced 8-lead msop package. the ltc4446 does not have adaptive shoot-through pro- tection. for similar drivers with adaptive shoot-through protection, please refer to the chart below. parameter ltc4446 ltc4444 ltc4444-5 shoot-through protection no yes yes absolute max ts 100v 100v 100v mosfet gate drive 7.2v to 13.5v 7.2v to 13.5v 4.5v to 13.5v v cc uv + 6.6v 6.6v 4v v cc uv C 6.15v 6.15v 3.55v n bootstrap supply voltage up to 114v n wide v cc voltage: 7.2v to 13.5v n 2.5a peak top gate pull-up current n 3a peak bottom gate pull-up current n 1.2 top gate driver pull-down n 0.55 bottom gate driver pull-down n 5ns top gate fall time driving 1nf load n 8ns top gate rise time driving 1nf load n 3ns bottom gate fall time driving 1nf load n 6ns bottom gate rise time driving 1nf load n drives both high and low side n-channel mosfets n undervoltage lockout n thermally enhanced 8-pin msop package n distributed power architectures n automotive power supplies n high density power modules n telecommunication systems two switch forward converter ltc4446 driving a 1000pf capacitive load l , lt, ltc and ltm are registered trademarks of linear technology corporation. all other trademarks are the property of their respective owners. protected by u.s. patents including 6677210. tg boost v in 36v to 72v (100v abs max) gnd ts v cc to secondary circuit ? tinp ltc4446 bg pwm2 (from controller ic) pwm1 (from controller ic) v cc 7.2v to 13.5v binp 4446 ta01a ? binp 5v/div bg 10v/div tinp 5v/div tg-ts 10v/div 20ns/div 4446 ta01b
ltc4446 2 4446f pin configuration absolute maximum ratings supply voltage v cc ......................................................... ?0.3v to 14v boost ? ts ........................................... ?0.3v to 14v tinp voltage ................................................. ?2v to 14v binp voltage ................................................. ?2v to 14v boost voltage ........................................ ?0.3v to 114v ts voltage ................................................... ?5v to 100v operating temperature range (note 2).... ?40c to 85c junction temperature (note 3) ............................. 125c storage temperature range ................... ?65c to 150c lead temperature (soldering, 10 sec) .................. 300c (note 1) 1 2 3 4 tinp binp v cc bg 8 7 6 5 ts tg boost nc top view 9 ms8e package 8-lead plastic msop t jmax = 125c, ja = 40c/w, jc = 10c/w (note 4) exposed pad (pin 9) is gnd, must be soldered to pcb order information electrical characteristics symbol parameter conditions min typ max units gate driver supply, v cc v cc operating voltage 7.2 13.5 v i vcc dc supply current tinp = binp = 0v 350 550 a uvlo undervoltage lockout threshold v cc rising v cc falling hysteresis l l 6.00 5.60 6.60 6.15 450 7.20 6.70 v v mv bootstrapped supply (boost ? ts) i boost dc supply current tinp = binp = 0v 0.1 2 a input signal (tinp , binp) v ih(bg) bg turn-on input threshold binp ramping high l 2.25 2.75 3.25 v v il(bg) bg turn-off input threshold binp ramping low l 1.85 2.3 2.75 v v ih(tg) tg turn-on input threshold tinp ramping high l 2.25 2.75 3.25 v v il(tg) tg turn-off input threshold tinp ramping low l 1.85 2.3 2.75 v i tinp(binp) input pin bias current 0.01 2 a high side gate driver output (tg) v oh(tg) tg high output voltage i tg = ?10ma, v oh(tg) = v boost ? v tg 0.7 v v ol(tg) tg low output voltage i tg = 100ma, v ol(tg) = v tg ?v ts l 120 220 mv i pu(tg) tg peak pull-up current l 1.7 2.5 a r ds(tg) tg pull-down resistance l 1.2 2.2 the l denotes the speci? cations which apply over the full operating temperature range, otherwise speci? cations are at t a = 25c. v cc = v boost = 12v, v ts = gnd = 0v, unless otherwise noted. lead free finish tape and reel part marking* package description temperature range ltc4446ems8e#pbf ltc4446ems8e#trpbf ltdpz 8-lead plastic msop ?40c to 85c ltc4446ims8e#pbf ltc4446ims8e#trpbf ltdpz 8-lead plastic msop ?40c to 85c consult ltc marketing for parts speci? ed with wider operating temperature ranges. *the temperature grade is identi? ed by a label on the shipping container. consult ltc marketing for information on non-standard lead based ? nish parts. for more information on lead free part marking, go to: http://www.linear.com/leadfree/ for more information on tape and reel speci? cations, go to: http://www.linear.com/tapeandreel/
ltc4446 3 4446f note 1: stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. exposure to any absolute maximum rating condition for extended periods may affect device reliability and lifetime. note 2: the ltc4446e is guaranteed to meet speci? cations from 0c to 85c. speci? cations over the C40c to 85c operating temperature range are assured by design, characterization and correlation electrical characteristics the l denotes the speci? cations which apply over the full operating temperature range, otherwise speci? cations are at t a = 25c. v cc = v boost = 12v, v ts = gnd = 0v, unless otherwise noted. symbol parameter conditions min typ max units low side gate driver output (bg) v oh(bg) bg high output voltage i bg = C10ma, v oh(bg) = v cc C v bg 0.7 v v ol(bg) bg low output voltage i bg = 100ma l 55 110 mv i pu(bg) bg peak pull-up current l 23 a r ds(bg) bg pull-down resistance l 0.55 1.1 switching time (binp (tinp) is tied to ground while tinp (binp) is switching. refer to timing diagram) t plh(tg) tg low-high (turn-on) propagation delay l 25 45 ns t phl(tg) tg high-low (turn-off) propagation delay l 22 40 ns t plh(bg) bg low-high (turn-on) propagation delay l 19 35 ns t phl(bg) bg high-low (turn-off) propagation delay l 14 30 ns t dm(bgtg) delay matching bg turn-off and tg turn-on l C15 10 35 ns t dm(tgbg) delay matching tg turn-off and bg turn-on l C25 C3 25 ns t r(tg) tg output rise time 10% C 90%, c l = 1nf 10% C 90%, c l = 10nf 8 80 ns ns t f(tg) tg output fall time 10% C 90%, c l = 1nf 10% C 90%, c l = 10nf 5 50 ns ns t r(bg) bg output rise time 10% C 90%, c l = 1nf 10% C 90%, c l = 10nf 6 60 ns ns t f(bg) bg output fall time 10% C 90%, c l = 1nf 10% C 90%, c l = 10nf 3 30 ns ns with statistical process controls. the ltc4446i is guaranteed over the full C40c to 85c operating temperature range. note 3: t j is calculated from the ambient temperature t a and power dissipation p d according to the following formula: t j = t a + (p d ? ja c/w) note 4: failure to solder the exposed back side of the ms8e package to the pc board will result in a thermal resistance much higher than 40c/w. typical performance characteristics v cc supply quiescent current vs voltage boost-ts supply quiescent current vs voltage v cc supply current vs temperature v cc supply voltage (v) 0 0 quiescent current (a) 50 150 200 250 6 7 8 9 10 11 12 13 450 4446 g01 100 12345 14 300 350 400 tinp = binp = 0v tinp(binp) = 12v t a = 25c boost = 12v ts = gnd boost supply voltage (v) 0 0 quiescent current (a) 50 150 200 250 6 7 8 9 10111213 400 4446 g02 100 12345 14 300 350 tinp = binp = 0v tinp = 0v, binp = 12v tinp = 12v, binp = 0v t a = 25c v cc = 12v ts = gnd temperature (c) v cc supply current (a) 350 360 370 4446 g03 330 300 C40 C25 C10 5 20 35 50 65 80 95 110 125 380 340 320 310 tinp = binp = 0v v cc = boost = 12v ts = gnd tinp(binp) = 12v
ltc4446 4 4446f typical performance characteristics boost supply current vs temperature output low voltage (v ol ) vs supply voltage output high voltage (v oh ) vs supply voltage input thresholds (tinp , binp) vs supply voltage input thresholds (tinp , binp) vs temperature input thresholds (tinp , binp) hysteresis vs voltage input thresholds (tinp , binp) hysteresis vs temperature v cc undervoltage lockout thresholds vs temperature rise and fall time vs v cc supply voltage temperature (c) boost supply current (a) 250 300 350 4446 g04 150 0 C40 C25 C10 5 20 35 50 65 80 95 110 125 400 200 100 50 tinp = 12v binp = 0v tinp = 0v binp = 12v tinp = binp = 0v v cc = boost = 12v ts = gnd supply voltage (v) 7 output voltage (mv) 140 10 4446 g05 80 40 89 11 20 0 160 120 100 60 12 13 14 v ol(tg) v ol(bg) t a = 25c i tg(bg) = 100ma boost = v cc ts = gnd supply voltage (v) 7 5 tg or bg output voltage (v) 6 8 9 10 15 12 9 11 12 4446 g06 7 13 C1ma 14 11 8 10 13 14 t a = 25c boost = v cc ts = gnd C10ma C100ma supply voltage (v) 7 2.1 tg or bg input threshold (v) 2.2 2.4 2.5 2.6 3.1 2.8 9 11 12 4446 g07 2.3 2.9 3.0 2.7 8 10 13 14 t a = 25c boost = v cc ts = gnd v ih(tg,bg) v il(tg,bg) temperature (c) C25 tg or bg input threshold (v) 2.6 2.8 3.0 95 4446 g08 2.4 2.2 2.5 2.7 2.9 2.3 2.1 2.0 5 35 65 C10 C40 110 20 50 80 125 v cc = boost = 12v ts = gnd v ih(tg,bg) v il(tg,bg) supply voltage (v) 78 375 tg or bg input threshold hysteresis (mv) 425 500 9 11 12 4446 g09 400 475 450 10 13 14 t a = 25c v cc = boost ts = gnd temperature (c) C40 C25 375 tg or bg input threshold hysteresis (mv) 425 500 C10 5 20 50 65 80 4446 g10 400 475 450 35 110 95 125 v cc = boost = 12v ts = gnd temperature (c) C40 6.0 v cc suplly voltage (v) 6.1 6.3 6.4 6.5 6.7 C25 35 65 4446 g11 6.2 6.6 20 95 125 110 C10 5 50 80 rising threshold falling threshold boost = v cc ts = gnd supply voltage (v) 7 rise/fall time (ns) 12 28 30 22 26 32 9 11 12 4446 g12 8 20 16 10 24 6 18 14 8 10 13 14 t a = 25c boost = v cc ts = gnd c l = 3.3nf t r(tg) t r(bg) t f(tg) t f(bg)
ltc4446 5 4446f typical performance characteristics rise and fall time vs load capacitance peak driver (tg, bg) pull-up current vs temperature output driver pull-down resistance vs temperature propagation delay vs v cc supply voltage propagation delay vs temperature load capacitance (nf) 1 rise/fall time (ns) 40 50 60 9 4445 g13 30 20 0 3 5 7 210 4 6 8 10 80 70 t r(tg) t r(bg) t f(tg) t f(bg) t a = 25c v cc = boost = 12v ts = gnd temperature (c) C40 2.0 pull-up current (a) 2.2 2.6 2.8 3.0 3.4 C25 35 65 4446 g14 2.4 3.2 20 95 125 110 C10 5 50 80 v cc = boost = 12v ts = gnd i pu(bg) i pu(tg) temperature (c) C25 output driver pull-down resistacne () 1.2 1.6 2.0 95 4446 g15 0.8 0.4 1.0 1.4 1.8 0.6 0.2 0 5 35 65 C10 C40 110 20 50 80 125 boost-ts = 12v v cc = 12v v cc = 14v v cc = 7v r ds(tg) r ds(bg) boost-ts = 14v boost-ts = 7v supply voltage (v) 7 10 propagation delay (ns) 12 16 18 20 30 24 9 11 12 4444 g16 14 26 28 22 8 10 13 14 t a = 25c boost = v cc ts = gnd t plh(tg) t plh(bg) t phl(bg) t phl(tg) temperature (c) C40 2 propagation delay (ns) 7 17 22 27 37 C25 35 65 4446 g17 12 32 20 95 125 110 C10 5 50 80 v cc = boost = 12v ts = gnd t plh(tg) t phl(tg) t plh(bg) t phl(bg) switching supply current vs input frequency switching supply current vs load capacitance switching frequency (khz) 0 supply current (ma) 1.5 2.0 2.5 600 1000 4446 g18 1.0 0.5 0 200 400 800 3.0 3.5 4.0 i boost (tg switching) i boost (bg switching) i vcc (bg switching) i vcc (tg switching) t a = 25c v cc = boost = 12v ts = gnd load capacitance (nf) 1 supply current (ma) 10 100 1345 0.1 2789 6 10 4446 g19 i vcc (bg switching at 1mhz) i boost (tg switching at 500khz) i boost (tg switching at 1mhz) i boost (bg switching at 1mhz or 5ookhz) i vcc (bg switching at 500khz) i vcc (tg switching at 500khz) i vcc (tg switching at 1mhz)
ltc4446 6 4446f pin functions block diagram tinp (pin 1): high side input signal. input referenced to gnd. this input controls the high side driver output (tg). binp (pin 2): low side input signal. this input controls the low side driver output (bg). v cc (pin 3): supply. this pin powers input buffers, logic and the low side gate driver output directly and the high side gate driver output through an external diode con- nected between this pin and boost (pin 6). a low esr ceramic bypass capacitor should be tied between this pin and gnd (pin 9). bg (pin 4): low side gate driver output (bottom gate). this pin swings between v cc and gnd. nc (pin 5): no connect. no connection required. boost (pin 6): high side bootstrapped supply. an ex- ternal capacitor should be tied between this pin and ts (pin 8). normally, a bootstrap diode is connected between v cc (pin 3) and this pin. voltage swing at this pin is from v cc C v d to v in + v cc C v d , where v d is the forward volt- age drop of the bootstrap diode. tg (pin 7): high side gate driver output (top gate). this pin swings between ts and boost. ts (pin 8): high side mosfet source connection (top source). exposed pad (pin 9): ground. must be soldered to pcb ground for optimal thermal performance. timing diagram 3 6 7 9 high side level shifter v cc uvlo ldo v int v cc gnd 7.2v to 13.5v boost v in up to 100v tg 8 ts bg 4446 bd 1 tinp binp 2 5 nc low side level shifter v cc v cc 4 90% input rise/fall time < 10ns tinp (binp) bg (tg) binp (tinp) tg (bg) 90% 90% t r t f t phl t plh 10% 4444 td 10% 10%
ltc4446 7 4446f operation overview the ltc4446 receives ground-referenced, low voltage digi- tal input signals to drive two n-channel power mosfets in a synchronous buck power supply con? guration. the gate of the low side mosfet is driven either to v cc or gnd, depending on the state of the input. similarly, the gate of the high side mosfet is driven to either boost or ts by a supply bootstrapped off of the switching node (ts). input stage the ltc4446 employs cmos compatible input thresholds that allow a low voltage digital signal to drive standard power mosfets. the ltc4446 contains an internal voltage regulator that biases both input buffers for high side and low side inputs, allowing the input thresholds (v ih = 2.75v, v il = 2.3v) to be independent of variations in v cc . the 450mv hysteresis between v ih and v il eliminates false triggering due to noise during switching transitions. however, care should be taken to keep both input pins (tinp and binp) from any noise pickup, especially in high frequency, high voltage applications. the ltc4446 input buffers have high input impedance and draw negligible input current, simplifying the drive circuitry required for the inputs. output stage a simpli? ed version of the ltc4446s output stage is shown in figure 1. the pull-up devices on the bg and tg outputs are npn bipolar junction transistors (q1 and q2). the bg and tg outputs are pulled up to within an npn v be (~0.7v) of their positive rails (v cc and boost, respectively). both bg and tg have n-channel mosfet pull-down devices (m1 and m2) which pull bg and tg down to their nega- tive rails, gnd and ts. the large voltage swing of the bg and tg output pins is important in driving external power mosfets, whose r ds(on) is inversely proportional to the gate overdrive voltage (v gs ? v th ). rise/fall time the ltc4446s rise and fall times are determined by the peak current capabilities of q1 and m1. the predriver that drives q1 and m1 uses a nonoverlapping transition scheme to minimize cross-conduction currents. m1 is fully turned off before q1 is turned on and vice versa. since the power mosfet generally accounts for the ma- jority of the power loss in a converter, it is important to quickly turn it on or off, thereby minimizing the transition time in its linear region. an additional bene? t of a strong pull-down on the driver outputs is the prevention of cross- conduction current. for example, when bg turns the low side (synchronous) power mosfet off and tg turns the high side power mosfet on, the voltage on the ts pin will rise to v in very rapidly. this high frequency positive voltage transient will couple through the c gd capacitance of the low side power mosfet to the bg pin. if there is an insuf? cient pull-down on the bg pin, the voltage on the bg pin can rise above the threshold voltage of the low side power mosfet, momentarily turning it back on. with figure 1. capacitance seen by bg and tg during switching 6 boost ltc4446 8 ts tg 7 v in up to 100v q1 m1 c gs 4446 f01 c gd 3 v cc 9 gnd 4 bg q2 m2 low side power mosfet high side power mosfet c gs c gd load inductor
ltc4446 8 4446f operation both the high side and low side mosfets conducting, signi? cant cross-conduction current will ? ow through the mosfets from v in to ground and will cause substantial power loss. a similar effect occurs on tg due to the c gs and c gd capacitances of the high side mosfet. the powerful output driver of the ltc4446 reduces the switching losses of the power mosfet, which increase with transition time. the ltc4446s high side driver is capable of driving a 1nf load with 8ns rise and 5ns fall times using a bootstrapped supply voltage v boost-ts of 12v while its low side driver is capable of driving a 1nf power dissipation to ensure proper operation and long-term reliability, the ltc4446 must not operate beyond its maximum tem- perature rating. package junction temperature can be calculated by: t j = t a + p d ( ja ) where: t j = junction temperature t a = ambient temperature p d = power dissipation ja = junction-to-ambient thermal resistance power dissipation consists of standby and switching power losses: p d = p dc + p ac + p qg where: p dc = quiescent power loss p ac = internal switching loss at input frequency, f in p qg = loss due turning on and off the external mosfet with gate charge qg at frequency f in load with 6ns rise and 3ns fall times using a supply volt- age v cc of 12v. undervoltage lockout (uvlo) the ltc4446 contains an undervoltage lockout detector that monitors v cc supply. when v cc falls below 6.15v, the output pins bg and tg are pulled down to gnd and ts, respectively. this turns off both external mosfets. when v cc has adequate supply voltage, normal operation will resume. applications information the ltc4446 consumes very little quiescent current. the dc power loss at v cc = 12v and v boost-ts = 12v is only (350a)(12v) = 4.2mw. at a particular switching frequency, the internal power loss increases due to both ac currents required to charge and discharge internal node capacitances and cross-conduc- tion currents in the internal logic gates. the sum of the quiescent current and internal switching current with no load are shown in the typical performance characteristics plot of switching supply current vs input frequency. the gate charge losses are primarily due to the large ac currents required to charge and discharge the capacitance of the external mosfets during switching. for identical pure capacitive loads c load on tg and bg at switching frequency f in , the load losses would be: p cload = (c load )(f)[(v boost-ts ) 2 + (v cc ) 2 ] in a typical synchronous buck con? guration, v boost-ts is equal to v cc C v d , where v d is the forward voltage drop across the diode between v cc and boost. if this drop is small relative to v cc , the load losses can be approximated as: p cload = 2(c load )(f in )(v cc ) 2
ltc4446 9 4446f applications information unlike a pure capacitive load, a power mosfets gate capacitance seen by the driver output varies with its v gs voltage level during switching. a mosfets capacitive load power dissipation can be calculated using its gate charge, q g . the q g value corresponding to the mosfets v gs value (v cc in this case) can be readily obtained from the manufacturers q g vs v gs curves. for identical mosfets on tg and bg: p qg = 2(v cc )(q g )(f in ) to avoid damage due to power dissipation, the ltc4446 includes a temperature monitor that will pull bg and tg low if the junction temperature rises above 160c. normal operation will resume when the junction temperature cools to less than 135c. bypassing and grounding the ltc4446 requires proper bypassing on the v cc and v boost-ts supplies due to its high speed switching (nanoseconds) and large ac currents (amperes). careless component placement and pcb trace routing may cause excessive ringing. to obtain the optimum performance from the ltc4446: a. mount the bypass capacitors as close as possible between the v cc and gnd pins and the boost and ts pins. the leads should be shortened as much as possible to reduce lead inductance. b. use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. remember that the ltc4446 switches greater than 3a peak currents and any signi? cant ground drop will degrade signal integrity. c. plan the power/ground routing carefully. know where the large load switching current is coming from and going to. maintain separate ground return paths for the input pin and the output power stage. d. keep the copper trace between the driver output pin and the load short and wide. e. be sure to solder the exposed pad on the back side of the ltc4446 package to the board. correctly soldered to a 2500mm 2 doublesided 1oz copper board, the ltc4446 has a thermal resistance of approximately 40c/w for the ms8e package. failure to make good thermal contact between the exposed back side and the copper board will result in thermal resistances far greater than 40c/w.
ltc4446 10 4446f typical application ltc3722/ltc4446 420w 36v-72v in to 12v/35a isolated full-bridge supply 18 10 9 11 12v v in 12 ltc3722egn-1 pdly outf oute comp ss pgnd gnd cs v in sbus uvlo 1f adly 330pf mmbt3904 2.2nf d12 5.1v t3 1(1.5h):0.5 t1 5(105h):1:1 t2 5:5(105h):1:1 2.49k 9.53k 10k 2.7k 470 1/4w l4 1mh c3 68f 20v v h ? ? 16 15 8 19 5 4 150 0.02 1.5w 30.1k 220pf 100 330 2.21k 1.5k 2.21k 1.5k 4.87k 1/4w 4.87k 1/4w 51 2w 220pf 182k 20k 1/4w 22pf 22pf 4.99k 80.6k 80.6k 68.1k 18.2k 4.99k 180pf 68nf 220pf 0.47f 20k sync pv cc cse + ltc3901egn cse C 8 65 1 41013 7 1f 1f 4446 ta02a Cv out v out Cv out d10 10v v out me me2 v out v out gnd pgnd gnd2 pgnd2 timer v cc 330pf 23 39.2k 100 1k csf + Cv out v out v out Cv out v out 12v/35a Cv out csf C 11 12 mf mf2 14 15 16 22nf si7852dp s 4 si7852dp s 4 si7852dp 2 l1 1.3h 11 4 2 12v d7 d8 4 2 1 6 ? ? ? ? ? ? ? ? 10 8 7 + 1 0.22f si7852dp s 2 3 6 7 8 9 4 a 2 b d2 ltc4446 boost tinp binp tg ts gnd bg v cc 12v 1 2 0.22f si7852dp s 2 3 6 7 8 9 4 c d d3 d4 d5 51 2w 0.47f 100v ltc4446 boost tinp binp tg ts gnd bg v cc 12v 1f 100v s 4 v in v in Cv in 36v to 72v 1f 100v 17 d outd 19 c outc 20 b outb 21 a bc outa c1, c2 180f 16v s 2 + 1f 0.47f, 100v tdk c3216x7r2a474m 1f, 100v tdk c4532x7r2a105m c1,c2: sanyo 16sp180m c3: avx tpse686m020r0150 c4: murata de2e3kh222mb3b d4-d6: murs120t3 d2, d3, d7, d8: bas21 d9: mmbz5226b d10: mmbz5240b d11: bat54 d12: mmbz231b l1: sumida cdep105-1r3mc-50 l2: pulse pa0651 l3: pa1294.910 l4: coilcraft do1608c-105 q1, q2: zetex fmmt619 q3, q4: zetex fmmt718 t1, t2: pulse pa0526 t3: pulse pa0297 6 3 4 22 23 6 33k 1m 57 d11 8.25k i sns 5v ref i sns 0.1f 58 1 2 1 moc207 c4 2.2nf 250v 0.047f 3 6 5 8 gnd-f v + gnd-s coll ref lt1431cs8 1k 22 200k 750 100 d9 3.3v 0.02 1.5w v h d6 2k 1/2w 0.82f 100v 470pf 200v l3 0.85h 47 1w 0.47f 100v si7852dp s 2 11 10 8 7 mmbt3904 fb sprg r leb 6.19k 13 sync 5.1k 1 nc 8 dprg 2 v ref 5v ref 14 c t 24 l2 150nh ? q1 q3 q2 q4
ltc4446 11 4446f information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. package description ms8e package 8-lead plastic msop , exposed die pad (reference ltc dwg # 05-08-1662 rev d) msop (ms 8 e) 0307 rev d 0.53 0.152 (.021 .006) seating plane note: 1. dimensions in millimeter/(inch) 2. drawing not to scale 3. dimension does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.152mm (.006") per side 4. dimension does not include interlead flash or protrusions. interlead flash or protrusions shall not exceed 0.152mm (.006") per side 5. lead coplanarity (bottom of leads after forming) shall be 0.102mm (.004") max 0.1 8 (.007) 0.254 (.010) 1.10 (.043) max 0.22 ?0.3 8 (.009 ?.015) typ 0. 8 6 (.034) ref 0.65 (.0256) bsc 0 ?6 typ detail ? detail ? gauge plane 12 3 4 4.90 0.152 (.193 .006) 8 8 1 bottom view of exposed pad option 7 6 5 3.00 0.102 (.11 8 .004) (note 3) 3.00 0.102 (.11 8 .004) (note 4) 0.52 (.0205) ref 1. 8 3 0.102 (.072 .004) 2.06 0.102 (.0 8 1 .004) 5.23 (.206) min 3.20 ?3.45 (.126 ?.136) 2.0 8 3 0.102 (.0 8 2 .004) 2.794 0.102 (.110 .004) 0. 88 9 0.127 (.035 .005) recommended solder pad layout 0.42 0.03 8 (.0165 .0015) typ 0.65 (.0256) bsc 0.1016 0.050 8 (.004 .002)
ltc4446 12 4446f linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax: (408) 434-0507 www.linear.com ? linear technology corporation 2008 lt 0508 ? printed in usa typical application ltc4446 fast turn-on/turn-off dc switch related parts part number description comments ltc1693 family high speed dual mosfet drivers 1.5a peak output current, 4.5v v in 13.2v lt ? 1952/ltc3900 36v to 72v input isolated dc/dc converter chip sets synchronous recti? cation; overcurrent, overvoltage, uvlo protec tion; power good output signal; compact solution lt3010/lt3010-5 50ma, 3v to 80v low dropout micropower regulators low quiescent current (30a), stable with small (1f) ceramic c apacitor ltc3703 100v synchronous switching regulator controller no r sense ? , synchronizable voltage mode control ltc3722-1/ ltc3722-2 synchronous dual mode phase modulated full-bridge controllers adaptive zero voltage switching, high output power levels (up to kilowatts) ltc3723-1/ ltc3723-2 synchronous push-pull pwm controllers current mode or voltage mode push-pull controllers ltc3780 high power buck-boost controller four switch, 4v v in 36v, 0.8v v out 30v, high ef? ciency ltc3785 buck-boost controller high ef? ciency, four switch, 2.7v v in 10v, 2.7v v out 10v ltc3810 100v current mode synchronous step-down switching regulator controller no r sense , synchronizable tracking, power good signal ltc3813 100v current mode synchronous step-up controller no r sense , on-board 1 gate drivers, synchronizable lt3845 high power synchronous dc/dc controller current mode control, v in up to 60v, low i q ltc3901 secondary side synchronous driver for push-pull and full-bridge converters programmable time out, reverse inductor current sense ltc4440/ ltc4440-5 high speed, high voltage, high side gate drivers wide operating v in range: up to 80v dc, 100v transient ltc4441 6a mosfet driver adjustable gate drive from 5v to 8v, 5v v in 28v ltc4442/ltc4442-1 high speed synchronous n-channel mosfet drivers 5a peak output current, 6v to 9.5v gate drive supply, 38v max i nput supply ltc4443/ltc4443-1 high speed synchronous n-channel mosfet driver with integrated schottky diode 5a peak output current, 6v to 9.5v gate drive supply, 38v max input supply ltc4444 high voltage synchronous n-channel mosfet driver 3a/2.5a peak output current, 7.2v to 13.5v gate drive supply, 100v max input supply, adaptive shoot-through protection ltc4444-5 high voltage synchronous n-channel mosfet driver 1.75a/1.5a peak output current, 4.5v to 13.5v gate drive supply, 100v max input supply, adaptive shoot-through protection no r sense is a trademark of linear technology corporation. tg boost v cc v in 0v to 100v 12v gnd bg ts 4.7nf 0.33f 4.7k 15k 100k mmbt2369 tinp 3 1 2 6 7 8 9 ltc4446 binp 200 0.01f 100v bas21 bas21 bzx84c12l 12v 3.3nf 4446 ta03 bas21 load

▲Up To Search▲

Price & Availability of LTC4446EMS8E-PBF

	To Download LTC4446EMS8E-PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .